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| 2SD2638 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SD2638 Horizontal Deflection Output for Color TV, Digital TV. High Speed Switching Applications. * * * High voltage: VCBO = 1700 V Low saturation voltage: VCE (sat) = 5 V (max) High speed: tf = 0.8 s (max) Unit: mm Maximum Ratings (Tc = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 1700 750 5 7 14 3.5 50 150 -55~150 Unit V V V A A W C C JEDEC JEITA TOSHIBA 2-16E3A Equivalent Circuit 1. Base 50 W (typ.) 2. Collector Weight: 5.5 g (typ.) 3. Emitter Electrical Characteristics (Tc = 25C) Characteristics Collector cut-off current Emitter cut-off current Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Forward voltage (damper diode) Transition frequency Collector output capacitance Switching time Storage time Fall time Symbol ICBO IEBO V (BR) EBO hFE (1) hFE (2) VCE (sat) VBE (sat) VF fT Cob tstg tf Test Condition VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IE = 400 mA, IC = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 5.5 A IC = 5.5 A, IB = 1.2 A IC = 5.5 A, IB = 1.2 A IF = 7 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 5.5 A, IB1 (end) = 1.1 A, fH = 15.75 kHz Min 3/4 66 5 8 4.5 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 3/4 1.0 1.3 2 125 7 0.4 Max 1 200 3/4 25 7.5 5 1.5 2 3/4 3/4 9 0.8 V V V MHz pF ms Unit mA mA V 1 2001-11-27 2SD2638 IC - VCE 10 Common emitter Tc = 25C 8 1.4 1.6 1.8 2 (A) 6 Collector current 1.2 1.0 0.8 0.6 0.4 0.2 IC 4 2 IB = 0.1 A 0 0 2 4 6 8 10 Collector-emitter voltage VCE (V) hFE - IC 300 Common emitter VCE = 5 V hFE DC current gain 100 30 Tc = 100C 10 25 -25 3 1 0.01 0.03 0.1 0.3 1 3 10 30 Collector current IC (A) IC - VBE 10 Common emitter VCE = 5 V 10 IF - VF (A) Open base 8 (A) Collector current 6 Instantaneous forward current IC IF 8 6 4 4 2 Tc = 100C 0 0 25 -25 2 Tc = 100C -25 0.2 0.4 0.6 0.8 1 1.2 0 0 25 0.4 0.8 1.2 1.6 2 Base-emitter voltage VBE (V) Instantaneous forward voltage VF (V) 2 2001-11-27 2SD2638 VCE - IB 10 10 VCE (sat) - IC Collector emitter saturation voltage VCE (sat) (V) Common emitter Tc = -25C Common emitter Tc = -25C 8 6 (V) 5 3 8 Collector emitter voltage VCE 6 1 0.5 0.3 4 4 IC/IB = 2 0.1 0.05 0.2 2 3 0 0 3.5 4 4.5 5 IC = 5.5 A 1 3 5 10 30 50 100 0.4 0.8 1.2 1.6 2 2.4 Collector current Base current IB (A) IC (A) VCE - IB 10 10 VCE (sat) - IC Collector emitter saturation voltage VCE (sat) (V) Common emitter Tc = 25C 5 3 Common emitter Tc = 25C 8 (V) 8 Collector emitter voltage VCE 6 6 1 0.5 0.3 4 4 3.5 4.5 IC/IB = 2 0.1 0.05 0.2 2 3 0 0 4 5 IC = 5.5 A 1 3 5 10 30 50 100 0.4 0.8 1.2 1.6 2 2.4 Collector current Base current IB (A) IC (A) VCE - IB 10 VCE (sat) - IC Common emitter Tc = 100C 10 Common emitter Tc = 100C 8 (V) Collector emitter saturation voltage VCE (sat) (V) 8 5 3 Collector emitter voltage VCE 6 6 1 0.5 0.3 4 4 3.5 IC/IB = 2 0.1 0.05 0.2 2 3 0 0 4 4.5 5 IC = 5.5 A 0.4 0.8 1.2 1.6 2 2.4 1 3 5 10 30 50 100 Base current IB (A) Collector current IC (A) 3 2001-11-27 2SD2638 rth (j-c) - tw Transient thermal impedance (junction-case) rth (j-c) (C/W) 10 1 0.1 0.01 Tc = 25C (infinite heat sink) Curves should be applied in thermal limited area. (single nonrepetitive pulse) 0.001 10 m 100 m 1m 10 m 100 m 1 10 100 1000 Pulse width tw (s) Safe Operating Area 100 100 IC max (pulsed)* 100 ms* 1 ms* 10 10 ms* PC - Tc (W) Infinite heat sink 80 Cllector power dissipation PC 60 (A) IC IC max (continuous) 10 ms* 40 Collector current 1 DC operation Tc = 25C 100 ms* 20 0 0 0.1 25 50 75 100 125 150 175 Case temperature Tc *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. (C) VCEO max 100 1000 0.01 1 10 Collector-emitter voltage VCE (V) 4 2001-11-27 2SD2638 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 5 2001-11-27 |
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